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Infineon IGT60R070D1

Produttore
Cod. Prod.
IGT60R070D1
Cod. LCSC
C536084
Imballo
HSOF-8-3
Numero Cliente
Attr. chiave
125W 600V 31A 55mΩ@26.1mA 1 N-channel N-Channel HSOF-8-3 Single FETs, MOSFETs
Scheda TecnicaInfineon IGT60R070D1
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreInfineon
ImballoHSOF-8-3
Output Capacitance(Coss)72pF
Ciss-Input Capacitance380pF
Pd - Power Dissipation125W
Operating Temperature-55℃~+150℃
Configuration-
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Reverse Transfer Capacitance (Crss)0.3pF
RDS(on)55mΩ@26.1mA
Number1 N-channel
Gate Charge(Qg)5.8nC
Vgs±10V
Gate Threshold Voltage (Vgs(th))1.2V
TypeN-Channel

Caratteristiche

Traduzione AI
  • Enhancement-mode transistor – normally-off switch
  • Ultra-fast switching
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge, low output charge
  • Excellent commutation ruggedness
  • JEDEC-qualified (JESD47 and JESD22) for industrial applications

Applicazioni

Traduzione AI
  • Industrial, telecom, and data center SMPS based on half-bridge topology (hard-switching and soft-switching half-bridge topologies, e.g., totem-pole PFC, high-frequency LLC)