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YFW BD682

Hersteller
YFWAsian Brands
Herst.-Teilenr.
BD682
LCSC-Nr.
C50327207
Verp.
TO-126
Kundennummer
Hauptmerkm.
100V 750 4A PNP TO-126 Single Bipolar Transistors
DatenblattYFW BD682
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
HerstellerYFW
Verp.TO-126
Vbe Saturation(VBE(sat))-
Current - Collector Cutoff-
Operating Temperature-55℃~+150℃
Vbe On(VBE(on))2.5V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain750
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation40W
Current - Collector(Ic)4A
typePNP
Vce Saturation(VCE(sat))2.5V@1.5A,30mA
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Beschreibung

KI-Übersetzung

BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681 are silicon epitaxial base NPN power transistors in a monolithic Darlington configuration, housed in a TO-126 plastic package. They are suitable for medium-power linear and switching applications. The complementary PNP types are BD676, BD676A, BD678, BD678A, BD680, BD680A, and BD682, respectively.

Anwendungen

KI-Übersetzung
  • Linear and switching industrial equipment.