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VISHAY IRFR9220TRLPBF
| Producent | |
| Nr części prod. | IRFR9220TRLPBF |
| Nr LCSC | C428745 |
| Opak. | DPAK(TO-252) |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 200V 2.3A DPAK(TO-252) |
| Karta Katalogowa | VISHAY IRFR9220TRLPBF |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 110pF | |
| Ciss-Input Capacitance | 340pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 110pF | |
| Ciss-Input Capacitance | 340pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2.3A | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Opis
Third power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Funkcje
- RoHS COMPLIANT HALOGEN FREE Available
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Surface Mount (IRFR9220, SiHFR9220)
- Straight Lead (IRFUFU9220, SiHFU9220)
- Available in Tape and Reel
- P-Channel
- Fast Switching
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 3.1272 | $ 3.13 |
| 10+ | $ 2.7207 | $ 27.21 |
| 30+ | $ 2.4672 | $ 74.02 |
| 100+ | $ 2.2075 | $ 220.75 |
| 500+ | $ 2.09 | $ 1045.00 |
| 1,000+ | $ 2.039 | $ 2039.00 |
Standardowa Obudowa3000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 110pF | |
| Ciss-Input Capacitance | 340pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 110pF | |
| Ciss-Input Capacitance | 340pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2.3A | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Opis
Third power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Funkcje
- RoHS COMPLIANT HALOGEN FREE Available
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Surface Mount (IRFR9220, SiHFR9220)
- Straight Lead (IRFUFU9220, SiHFU9220)
- Available in Tape and Reel
- P-Channel
- Fast Switching
C428745 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| IRFR9220TRPBF | VISHAY | Podobne | TO-252(DPAK) | 637 | $ 1.1974 | ||
| IRFR9220PBF | VISHAY | Podobne | DPAK(TO-252) | 22 | $ 1.4579 | ||
| HSU5P20 | HUASHUO | Podobne | TO-252-2L | 188 | $ 0.4862 | ||
| SIHFR9220-GE3 | VISHAY | Podobne | TO-252AA | 100 | $ 1.5239 | ||
| 2SJ319STL-E-VB | VBsemi Elec | Podobne | TO-252 | 5 | $0.8614 $0.9067 |