VISHAY VBT3045BP-M3/8W
| 제조업체 | |
| 제조사 품번 | VBT3045BP-M3/8W |
| LCSC 번호 | C3758743 |
| 포장 | TO-263AB(D2PAK) |
| 고객 번호 | |
| 주요 제원 | 1 Independent 45V 700mV@30A 30A TO-263AB(D2PAK) Single Diodes RoHS |
| 데이터시트 | VISHAY VBT3045BP-M3/8W |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | VISHAY | |
| 포장 | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 45V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@30A | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | VISHAY | |
| 포장 | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 45V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@30A | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
TMBS (Trench MOS Barrier Schottky) rectifier for photovoltaic solar cell bypass protection. Ultra-low VF = 0.30V at IF = 5A. D²PAK (TO-263AB) package.
주요 특징
AI 번역
- Trench MOS Schottky technology
- Low forward voltage drop, low power dissipation, high efficiency operation
- MSL Level 1 per J-STD-020, LF max peak temperature 245°C
- Solar bypass applications with max junction temperature TJ of 200°C
응용 분야
AI 번역
Used as bypass diodes in solar cell junction boxes for protection, operating with DC forward current without reverse bias.
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | VISHAY | |
| 포장 | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 45V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@30A | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | VISHAY | |
| 포장 | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 45V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@30A | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
TMBS (Trench MOS Barrier Schottky) rectifier for photovoltaic solar cell bypass protection. Ultra-low VF = 0.30V at IF = 5A. D²PAK (TO-263AB) package.
주요 특징
AI 번역
- Trench MOS Schottky technology
- Low forward voltage drop, low power dissipation, high efficiency operation
- MSL Level 1 per J-STD-020, LF max peak temperature 245°C
- Solar bypass applications with max junction temperature TJ of 200°C
응용 분야
AI 번역
Used as bypass diodes in solar cell junction boxes for protection, operating with DC forward current without reverse bias.
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

