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Hersteller
onsemi
Herst.-Teilenr.
FQA19N60
LCSC-Nr.
C336035
Verp.
TO-3P
Kundennummer
Hauptmerkm.
600V 18.5A 300W 380mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS
Datenblattonsemi FQA19N60
RoHS-Konformität3 Dokumente verfügbar
Alternativteile5
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Herstelleronsemi
Verp.TO-3P
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)18.5A
Ciss-Input Capacitance3.6nF
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss)45pF
RDS(on)380mΩ@10V
Number1 N-channel
Gate Charge(Qg)90nC@10V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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Beschreibung

KI-Übersetzung

This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic ballasts.

Merkmale

KI-Übersetzung
  • 18.5 A, 600 V, RDS(on) = 380 mΩ (max) @ VGS = 10 V, ID = 9.3 A
  • Low gate charge (typical 70 nC)
  • Low Crss (typical 35 pF)
  • 100% avalanche tested

Anwendungen

KI-Übersetzung
  • Switching mode power supply
  • Active power factor correction (PFC)
  • Electronic ballast