Infineon IMBG120R140M1HXTMA1

Produttore	Infineon
Cod. Prod.	IMBG120R140M1HXTMA1
Cod. LCSC	C3279263
Imballo	TO-263-7-12
Numero Cliente
Attr. chiave	1.2kV 18A 107W 189mΩ N-Channel TO-263-7-12 Single FETs, MOSFETs RoHS
Scheda Tecnica	Infineon IMBG120R140M1HXTMA1
Conformità RoHS	1 documenti disponibili

Specifiche del Prodotto

Tutto

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttore	Infineon
Imballo	TO-263-7-12
Configuration	-
Operating Temperature	-55℃~+175℃
Drain to Source Voltage	1.2kV
Output Capacitance(Coss)	23pF
Current - Continuous Drain(Id)	18A
Ciss-Input Capacitance	491pF
Pd - Power Dissipation	107W
Reverse Transfer Capacitance (Crss)	2.4pF
RDS(on)	189mΩ
Number	-
Gate Charge(Qg)	13.4nC
Gate Threshold Voltage (Vgs(th))	5.7V
Type	N-Channel

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttore	Infineon
Imballo	TO-263-7-12
Configuration	-
Operating Temperature	-55℃~+175℃
Drain to Source Voltage	1.2kV
Output Capacitance(Coss)	23pF
Current - Continuous Drain(Id)	18A

Garanzia su ogni ordine

100% Autentico · Reso o Sostituzione entro 30 Giorni

Tutto

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttore	Infineon
Imballo	TO-263-7-12
Configuration	-
Operating Temperature	-55℃~+175℃
Drain to Source Voltage	1.2kV
Output Capacitance(Coss)	23pF
Current - Continuous Drain(Id)	18A
Ciss-Input Capacitance	491pF
Pd - Power Dissipation	107W
Reverse Transfer Capacitance (Crss)	2.4pF
RDS(on)	189mΩ
Number	-
Gate Charge(Qg)	13.4nC
Gate Threshold Voltage (Vgs(th))	5.7V
Type	N-Channel

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttore	Infineon
Imballo	TO-263-7-12
Configuration	-
Operating Temperature	-55℃~+175℃
Drain to Source Voltage	1.2kV
Output Capacitance(Coss)	23pF
Current - Continuous Drain(Id)	18A