MICROCHIP JANSL2N2369AUB/TR
| Producent | |
| Nr części prod. | JANSL2N2369AUB/TR |
| Nr LCSC | C3202263 |
| Opak. | SMD-3P |
| Numer Klienta | |
| Klucz. cechy | 20V 20 NPN SMD-3P Single Bipolar Transistors RoHS |
| Karta Katalogowa | MICROCHIP JANSL2N2369AUB/TR |
| Zgodność z RoHS | 2 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MICROCHIP | |
| Opak. | SMD-3P | |
| Current - Collector Cutoff | 400nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 20V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 360mW | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 450mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MICROCHIP | |
| Opak. | SMD-3P | |
| Current - Collector Cutoff | 400nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - |
| Typ | Opis | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 20V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 360mW | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 450mV |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Linear derating 3.08mW/°C above TA = +37.5°C
- Linear derating 2.86mW/°C above TC = +63.5°C
- Linear derating 6.85mW/°C above TC = +25°C
- Linear derating 3.44mW/°C above TA = +63.5°C
- Linear derating 8.55mW/°C above TC = +63.5°C
- Linear derating 8.00mW/°C above TC = +63.5°C
- Pulse test: pulse width = 300μs, duty cycle ≤ 2.0%
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 395.0471 | $ 395.05 |
| 200+ | $ 152.8792 | $ 30575.84 |
| 500+ | $ 147.5066 | $ 73753.30 |
| 1,000+ | $ 144.8512 | $ 144851.20 |
Standardowa Obudowa5000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MICROCHIP | |
| Opak. | SMD-3P | |
| Current - Collector Cutoff | 400nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 20V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 360mW | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 450mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | MICROCHIP | |
| Opak. | SMD-3P | |
| Current - Collector Cutoff | 400nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - |
| Typ | Opis | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 20V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 360mW | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 450mV |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Linear derating 3.08mW/°C above TA = +37.5°C
- Linear derating 2.86mW/°C above TC = +63.5°C
- Linear derating 6.85mW/°C above TC = +25°C
- Linear derating 3.44mW/°C above TA = +63.5°C
- Linear derating 8.55mW/°C above TC = +63.5°C
- Linear derating 8.00mW/°C above TC = +63.5°C
- Pulse test: pulse width = 300μs, duty cycle ≤ 2.0%
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

