GigaDevice Semicon Beijing GD25LB512MEFIRR
| 제조업체 | GigaDevice Semicon BeijingAsian Brands |
| 제조사 품번 | GD25LB512MEFIRR |
| LCSC 번호 | C2976324 |
| 포장 | SOP-16-300mil |
| 고객 번호 | |
| 주요 제원 | 512Mbit 1.65V~2V 166MHz SPI SOP-16-300mil Memory |
| 데이터시트 | GigaDevice Semicon Beijing GD25LB512MEFIRR |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | GigaDevice Semicon Beijing | |
| 포장 | SOP-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | GigaDevice Semicon Beijing | |
| 포장 | SOP-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
개요
The GD25LB512ME (512M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Quad SPI and DTR mode: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3, and RESET#. The Quad output data is transferred with speed of 664Mbits/s, the Quad I/O data is transferred with speed of 532Mbits/s, and the DTR Quad I/O data is transferred with speed of 720Mbits/s.
주요 특징
- 512M-bit Serial Flash - 64M-Byte - 256 Bytes per programmable page
- Standard, Quad SPI, DTR, QPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, RESET#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- QPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- SPI DTR (Double Transfer Rate) Read
- 3 or 4-Byte Address Mode
- High Speed Clock Frequency
- 166MHz for fast read
- Quad I/O Data transfer up to 532Mbits/s
- QPI Mode Data transfer up to 532Mbits/s
- DTR Quad I/O Data transfer up to 720Mbits/s
- Allows XIP (eXecute in Place) Operation
- High speed Read reduce overall XiP instruction fetch time
- Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# Pin
- Individual Block Protection
- Fast Program/Erase Speed
- Page Program time: 0.18ms typical
- Sector Erase time: 30ms typical
- Block Erase time: 0.1/0.2s typical
- Chip Erase time: 100s typical
- Flexible Architecture
- Sector of 4K-Byte
- Block of 32/64K-Byte
- Erase/Program Suspend/Resume
- Low Power Consumption
- 20μA typical stand-by current
- 4μA typical power-down current
- Advanced Security Features
- 128-bit Unique ID
- 4K-Byte Security Registers With OTP Lock
- Single Power Supply Voltage
- Full voltage range: 1.65~2.0V
- Endurance and Data Retention
- Minimum 100,000 Program/Erase Cycles
- 20-year data retention typical
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | GigaDevice Semicon Beijing | |
| 포장 | SOP-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | GigaDevice Semicon Beijing | |
| 포장 | SOP-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
개요
The GD25LB512ME (512M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Quad SPI and DTR mode: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3, and RESET#. The Quad output data is transferred with speed of 664Mbits/s, the Quad I/O data is transferred with speed of 532Mbits/s, and the DTR Quad I/O data is transferred with speed of 720Mbits/s.
주요 특징
- 512M-bit Serial Flash - 64M-Byte - 256 Bytes per programmable page
- Standard, Quad SPI, DTR, QPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, RESET#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- QPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- SPI DTR (Double Transfer Rate) Read
- 3 or 4-Byte Address Mode
- High Speed Clock Frequency
- 166MHz for fast read
- Quad I/O Data transfer up to 532Mbits/s
- QPI Mode Data transfer up to 532Mbits/s
- DTR Quad I/O Data transfer up to 720Mbits/s
- Allows XIP (eXecute in Place) Operation
- High speed Read reduce overall XiP instruction fetch time
- Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# Pin
- Individual Block Protection
- Fast Program/Erase Speed
- Page Program time: 0.18ms typical
- Sector Erase time: 30ms typical
- Block Erase time: 0.1/0.2s typical
- Chip Erase time: 100s typical
- Flexible Architecture
- Sector of 4K-Byte
- Block of 32/64K-Byte
- Erase/Program Suspend/Resume
- Low Power Consumption
- 20μA typical stand-by current
- 4μA typical power-down current
- Advanced Security Features
- 128-bit Unique ID
- 4K-Byte Security Registers With OTP Lock
- Single Power Supply Voltage
- Full voltage range: 1.65~2.0V
- Endurance and Data Retention
- Minimum 100,000 Program/Erase Cycles
- 20-year data retention typical
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

