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EDA 모델EasyEDA
LRC LP2305DSLT1G
| 제조업체 | LRCAsian Brands |
| 제조사 품번 | LP2305DSLT1G |
| LCSC 번호 | C172435 |
| 포장 | SOT-23 |
| 고객 번호 | |
| 주요 제원 | MOSFET P-CH 12V SOT-23 |
| 데이터시트 | LRC LP2305DSLT1G |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | LRC | |
| 포장 | SOT-23 | |
| Output Capacitance(Coss) | 375pF | |
| Ciss-Input Capacitance | 1.245nF | |
| Pd - Power Dissipation | 1.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 68mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | LRC | |
| 포장 | SOT-23 | |
| Output Capacitance(Coss) | 375pF | |
| Ciss-Input Capacitance | 1.245nF | |
| Pd - Power Dissipation | 1.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 68mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot-Through FOM
- The material of product compliance with RoHS requirements
- S-Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Small Package Outline
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | LRC | |
| 포장 | SOT-23 | |
| Output Capacitance(Coss) | 375pF | |
| Ciss-Input Capacitance | 1.245nF | |
| Pd - Power Dissipation | 1.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 68mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | LRC | |
| 포장 | SOT-23 | |
| Output Capacitance(Coss) | 375pF | |
| Ciss-Input Capacitance | 1.245nF | |
| Pd - Power Dissipation | 1.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 68mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot-Through FOM
- The material of product compliance with RoHS requirements
- S-Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Small Package Outline
C172435 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |