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Modelli EDAEasyEDA
onsemi NTBGS6D5N15MC
| Produttore | |
| Cod. Prod. | NTBGS6D5N15MC |
| Cod. LCSC | C898806 |
| Imballo | TO-263-7 |
| Numero Cliente | |
| Attr. chiave | 150V 5.5mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | onsemi NTBGS6D5N15MC |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-263-7 | |
| Output Capacitance(Coss) | 1.37nF | |
| Ciss-Input Capacitance | 4.745nF | |
| Pd - Power Dissipation | 3.7W;238W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 15A;121A | |
| Reverse Transfer Capacitance (Crss) | 10.3pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-263-7 | |
| Output Capacitance(Coss) | 1.37nF | |
| Ciss-Input Capacitance | 4.745nF | |
| Pd - Power Dissipation | 3.7W;238W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A;121A | |
| Reverse Transfer Capacitance (Crss) | 10.3pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caratteristiche
Traduzione AI
- Low on-resistance (RDS(on)) for minimized conduction losses
- Low gate charge (QG) and capacitance for minimized driving losses
- Reduced switching noise/EMI
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applicazioni
Traduzione AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling equipment
- Battery Management Systems (BMS)/energy storage, home automation
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Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 4.5096 | $ 4.51 |
| 200+ | $ 1.7458 | $ 349.16 |
| 500+ | $ 1.6842 | $ 842.10 |
| 800+ | $ 1.6534 | $ 1322.72 |
Package Standard800/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-263-7 | |
| Output Capacitance(Coss) | 1.37nF | |
| Ciss-Input Capacitance | 4.745nF | |
| Pd - Power Dissipation | 3.7W;238W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 15A;121A | |
| Reverse Transfer Capacitance (Crss) | 10.3pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-263-7 | |
| Output Capacitance(Coss) | 1.37nF | |
| Ciss-Input Capacitance | 4.745nF | |
| Pd - Power Dissipation | 3.7W;238W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A;121A | |
| Reverse Transfer Capacitance (Crss) | 10.3pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caratteristiche
Traduzione AI
- Low on-resistance (RDS(on)) for minimized conduction losses
- Low gate charge (QG) and capacitance for minimized driving losses
- Reduced switching noise/EMI
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applicazioni
Traduzione AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling equipment
- Battery Management Systems (BMS)/energy storage, home automation
C898806 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| NTBGS4D1N15MC | onsemi | Simili | D2PAK-7 | 455 | $ 4.1128 | ||
| IPB060N15N5ATMA1 | Infineon | Simili | TO-263-7-3 | 2 | $ 13.0439 | ||
| IPB065N15N3GATMA1 | Infineon | Simili | TO-263-7 | 16 | $ 6.7341 | ||
| IPF067N20NM6ATMA1 | Infineon | Simili | TO-263-7 | 3 | $ 10.1751 | ||
| NTBGS4D1N15MC-VB | VBsemi Elec | Simili | TO-263-7 | 10 | $2.1847 $2.5702 |