onsemi NRVTSM260EV2T1G
| Hersteller | |
| Herst.-Teilenr. | NRVTSM260EV2T1G |
| LCSC-Nr. | C889707 |
| Verp. | DO-216AA |
| Kundennummer | |
| Hauptmerkm. | 60V 1 Independent 650mV@2A 2A DO-216AA Single Diodes RoHS |
| Datenblatt | onsemi NRVTSM260EV2T1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-216AA | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 650mV@2A | |
| Reverse Leakage Current (Ir) | 12uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-216AA | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 650mV@2A | |
| Reverse Leakage Current (Ir) | 12uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
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Merkmale
KI-Übersetzung
- Fine Lithography Trench-based Schottky Technology for Very Low Forward Voltage and Low Leakage
- Fast Switching with Exceptional Temperature Stability
- Low Power Loss and Lower Operating Temperature
- Higher Efficiency for Achieving Regulatory Compliance
- Low Thermal Resistance
- High Surge Capability
- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Anwendungen
KI-Übersetzung
- Switching Power Supplies including Compact Adapters and Flat Panel Display
- High Frequency and DC-DC Converters
- Freewheeling and OR-ing diodes
- Reverse Battery Protection
- Instrumentation
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.4977 | $ 2.49 |
| 50+ | $ 0.424 | $ 21.20 |
| 150+ | $ 0.3924 | $ 58.86 |
| 500+ | $ 0.353 | $ 176.50 |
| 3,000+ | $ 0.3354 | $ 1006.20 |
| 6,000+ | $ 0.3249 | $ 1949.40 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-216AA | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 650mV@2A | |
| Reverse Leakage Current (Ir) | 12uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-216AA | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 650mV@2A | |
| Reverse Leakage Current (Ir) | 12uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Fine Lithography Trench-based Schottky Technology for Very Low Forward Voltage and Low Leakage
- Fast Switching with Exceptional Temperature Stability
- Low Power Loss and Lower Operating Temperature
- Higher Efficiency for Achieving Regulatory Compliance
- Low Thermal Resistance
- High Surge Capability
- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Anwendungen
KI-Übersetzung
- Switching Power Supplies including Compact Adapters and Flat Panel Display
- High Frequency and DC-DC Converters
- Freewheeling and OR-ing diodes
- Reverse Battery Protection
- Instrumentation
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NRVBM2H100T3G | onsemi | Ähnliche | DO-216AA | 640 | $ 0.8054 | ||
| NRVTSM260EV2T3G | onsemi | Ähnliche | DO-216AA | 0 | $ 0.1287 | ||
| UPS3100/TR13 | MICROCHIP | Ähnliche | DO-216AA | 0 | $ 4.1147 | ||
| UPS360/TR13 | MICROCHIP | Ähnliche | DO-216AA | 0 | $ 3.7714 | ||
| UPS560/TR13 | MICROCHIP | Ähnliche | DO-216AA | 0 | $ 3.3625 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen



