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Zdjęcia poglądowe
Modele EDAEasyEDA
ST STP8NK80ZFP
| Producent | |
| Nr części prod. | STP8NK80ZFP |
| Nr LCSC | C81351 |
| Opak. | TO-220FP |
| Numer Klienta | |
| Klucz. cechy | 30W 800V 6.2A 1.5Ω@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs RoHS |
| Karta Katalogowa | ST STP8NK80ZFP |
| Zgodność z RoHS | 3 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-220FP | |
| Output Capacitance(Coss) | 143pF | |
| Ciss-Input Capacitance | 1.32nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-220FP | |
| Output Capacitance(Coss) | 143pF | |
| Ciss-Input Capacitance | 1.32nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 6.2A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Funkcje
Tłumaczenie AI
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Zastosowania
Tłumaczenie AI
- Switching applications
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 162
162 W magazynie, wysyłka natychmiastowa
Niezalecane do nowych projektów
Po wyczerpaniu zapasów produkt zostanie oznaczony jako „Niedostępny”.
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.5269$ 0.3970 | $ 0.40 |
| 10+ | $ 1.3906$ 0.3616 | $ 3.62 |
| 50+ | $ 1.3046$ 0.3392 | $ 16.96 |
| 100+ | $ 1.217$ 0.3165 | $ 31.65 |
| 500+ | $ 1.1765$ 0.3059 | $ 152.95 |
| 1,000+ | $ 1.1586$ 0.3013 | $ 301.30 |
Standardowa Obudowa50/Full Tube | ||
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-220FP | |
| Output Capacitance(Coss) | 143pF | |
| Ciss-Input Capacitance | 1.32nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-220FP | |
| Output Capacitance(Coss) | 143pF | |
| Ciss-Input Capacitance | 1.32nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 6.2A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Funkcje
Tłumaczenie AI
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Zastosowania
Tłumaczenie AI
- Switching applications
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| 10N80L-CQ-TF1-T | UTC | Podobne | TO-220F1 | 126 | $ 0.6926 | ||
| YFW7N80AF | YFW | Podobne | TO-220F | 49 | $0.6773 $0.7129 | ||
| STP6NK90ZFP | ST | Podobne | TO-220FPAB-3 | 21 | $ 2.674 | ||
| 2SK4013-OSEN | OSEN | Podobne | TO-220F | 90 | $ 0.5486 | ||
| NPS7N80F | NH | Podobne | TO-220F | 900 | $ 0.4562 |