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Convert Semiconductor CSN06N3P6
| Produttore | Convert SemiconductorAsian Brands |
| Cod. Prod. | CSN06N3P6 |
| Cod. LCSC | C783171 |
| Imballo | PDFN-8(5.2x6.2) |
| Numero Cliente | |
| Attr. chiave | 83W 60V 100A 3mΩ@10V 1 N-channel N-Channel PDFN-8(5.2x6.2) Single FETs, MOSFETs |
| Scheda Tecnica | Convert Semiconductor CSN06N3P6 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Convert Semiconductor | |
| Imballo | PDFN-8(5.2x6.2) | |
| Output Capacitance(Coss) | 1.522nF | |
| Ciss-Input Capacitance | 3.45nF | |
| Pd - Power Dissipation | 83W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Convert Semiconductor | |
| Imballo | PDFN-8(5.2x6.2) | |
| Output Capacitance(Coss) | 1.522nF | |
| Ciss-Input Capacitance | 3.45nF | |
| Pd - Power Dissipation | 83W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Convert Semiconductor | |
| Imballo | PDFN-8(5.2x6.2) | |
| Output Capacitance(Coss) | 1.522nF | |
| Ciss-Input Capacitance | 3.45nF | |
| Pd - Power Dissipation | 83W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Convert Semiconductor | |
| Imballo | PDFN-8(5.2x6.2) | |
| Output Capacitance(Coss) | 1.522nF | |
| Ciss-Input Capacitance | 3.45nF | |
| Pd - Power Dissipation | 83W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
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C783171 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |