VBsemi Elec AO4800B-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AO4800B-VB |
| LCSC-Nr. | C7568774 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH ARR 30V 6.2A SO-8 |
| Datenblatt | VBsemi Elec AO4800B-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Ciss-Input Capacitance | 586pF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.2A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 586pF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% UIS tested
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Set-Top Box - Low Current DC/DC
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Ciss-Input Capacitance | 586pF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.2A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 586pF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% UIS tested
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Set-Top Box - Low Current DC/DC
C7568774 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



