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VBsemi Elec IPD90N03S4L-03-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | IPD90N03S4L-03-VB |
| LCSC-Nr. | C7463434 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 35.8A TO-252 |
| Datenblatt | VBsemi Elec IPD90N03S4L-03-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Ciss-Input Capacitance | 5.201nF | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Ciss-Input Capacitance | 5.201nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
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Merkmale
KI-Übersetzung
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
- OR-ing
- Server DC/DC
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100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Ciss-Input Capacitance | 5.201nF | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Ciss-Input Capacitance | 5.201nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
- OR-ing
- Server DC/DC
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |