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MICROCHIP APT30F50B
| Produttore | |
| Cod. Prod. | APT30F50B |
| Cod. LCSC | C7455370 |
| Imballo | TO-247 |
| Numero Cliente | |
| Attr. chiave | 415W 500V 30A 190mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | MICROCHIP APT30F50B |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 485pF | |
| Ciss-Input Capacitance | 4.525nF | |
| Pd - Power Dissipation | 415W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 60pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 485pF | |
| Ciss-Input Capacitance | 4.525nF | |
| Pd - Power Dissipation | 415W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 60pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
Descrizione
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery, and high recovery dv/dt capability, enabling high reliability in zero voltage switching (ZVS) phase-shifted bridge and other circuits. Low gate charge, high gain, and a significantly reduced ratio of feedback capacitance (Crss) to input capacitance (Ciss) provide excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, achieving low EMI and reliable paralleling even at very high switching frequencies.
Caratteristiche
- Fast switching, low EMI
- Low reverse recovery time (trr), high reliability
- Ultra-low feedback capacitance (Crss), enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applicazioni
- Zero Voltage Switching (ZVS) phase-shifted full-bridge and other full-bridge circuits
- Half-bridge circuits
- Power Factor Correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 485pF | |
| Ciss-Input Capacitance | 4.525nF | |
| Pd - Power Dissipation | 415W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 60pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 485pF | |
| Ciss-Input Capacitance | 4.525nF | |
| Pd - Power Dissipation | 415W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 60pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
Descrizione
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery, and high recovery dv/dt capability, enabling high reliability in zero voltage switching (ZVS) phase-shifted bridge and other circuits. Low gate charge, high gain, and a significantly reduced ratio of feedback capacitance (Crss) to input capacitance (Ciss) provide excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, achieving low EMI and reliable paralleling even at very high switching frequencies.
Caratteristiche
- Fast switching, low EMI
- Low reverse recovery time (trr), high reliability
- Ultra-low feedback capacitance (Crss), enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applicazioni
- Zero Voltage Switching (ZVS) phase-shifted full-bridge and other full-bridge circuits
- Half-bridge circuits
- Power Factor Correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |