DIODES DMN2028UFDF-13
| Produttore | |
| Cod. Prod. | DMN2028UFDF-13 |
| Cod. LCSC | C7264622 |
| Imballo | UDFN2020-6 |
| Numero Cliente | |
| Attr. chiave | 660mW 20V 7.9A 25mΩ@4.5V 1 N-channel N-Channel UDFN2020-6 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | DIODES DMN2028UFDF-13 |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | UDFN2020-6 | |
| Output Capacitance(Coss) | 98pF | |
| Ciss-Input Capacitance | 907pF | |
| Pd - Power Dissipation | 660mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7.9A | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@8V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | UDFN2020-6 | |
| Output Capacitance(Coss) | 98pF | |
| Ciss-Input Capacitance | 907pF | |
| Pd - Power Dissipation | 660mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 7.9A | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@8V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Caratteristiche
Traduzione AI
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm²
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applicazioni
Traduzione AI
- Battery Management Application
- Power Management Functions
- DC-DC Converters
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | UDFN2020-6 | |
| Output Capacitance(Coss) | 98pF | |
| Ciss-Input Capacitance | 907pF | |
| Pd - Power Dissipation | 660mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7.9A | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@8V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | UDFN2020-6 | |
| Output Capacitance(Coss) | 98pF | |
| Ciss-Input Capacitance | 907pF | |
| Pd - Power Dissipation | 660mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 7.9A | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@8V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Caratteristiche
Traduzione AI
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm²
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applicazioni
Traduzione AI
- Battery Management Application
- Power Management Functions
- DC-DC Converters
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

