pSemi PE42522B
| 제조업체 | |
| 제조사 품번 | PE42522B |
| LCSC 번호 | C726160 |
| 포장 | LGA-29(4x4) |
| 고객 번호 | |
| 주요 제원 | Ultra-BroadbandSPDTRFSwitch,9kHz-26.5GHz |
| 데이터시트 | pSemi PE42522B |
| 대체 부품 | 1 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | RF and Wireless/RF Switches | |
| 제조업체 | pSemi | |
| 포장 | LGA-29(4x4) | |
| Frequency range | 9kHz~26.5GHz | |
| Features | Hot-switch capability;Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | RF and Wireless/RF Switches | |
| 제조업체 | pSemi | |
| 포장 | LGA-29(4x4) | |
| Frequency range | 9kHz~26.5GHz |
| 타입 | 설명 | |
|---|---|---|
| Features | Hot-switch capability;Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
개요
The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity performance and has exceptional settling time making this device ideal for many broadband wireless applications. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42522 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
주요 특징
- Broad frequency support from 9 kHz to 26.5 GHz
- High port to port isolation: 63 dB @ 3 GHz, 58 dB @ 7.5 GHz, 39 dB @ 13.5 GHz, 28 dB @ 20 GHz, 22 dB @ 26.5 GHz
- HaRP™ technology enhanced
- Fast settling time
- No gate and phase lag
- No drift in insertion loss and phase
- Improved high frequency insertion loss and return loss performance with external matching
- High ESD performance of 3.0 kV HBM on all pins
- Packaging: 29 - lead 4×4 mm LGA
응용 분야
- Test and measurement
- Microwave backhaul
- Radar
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 40.537 | $ 40.54 |
| 3+ | $ 38.968 | $ 116.90 |
| 30+ | $ 37.4004 | $ 1122.01 |
표준 패키지3000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | RF and Wireless/RF Switches | |
| 제조업체 | pSemi | |
| 포장 | LGA-29(4x4) | |
| Frequency range | 9kHz~26.5GHz | |
| Features | Hot-switch capability;Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | RF and Wireless/RF Switches | |
| 제조업체 | pSemi | |
| 포장 | LGA-29(4x4) | |
| Frequency range | 9kHz~26.5GHz |
| 타입 | 설명 | |
|---|---|---|
| Features | Hot-switch capability;Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
개요
The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity performance and has exceptional settling time making this device ideal for many broadband wireless applications. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42522 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
주요 특징
- Broad frequency support from 9 kHz to 26.5 GHz
- High port to port isolation: 63 dB @ 3 GHz, 58 dB @ 7.5 GHz, 39 dB @ 13.5 GHz, 28 dB @ 20 GHz, 22 dB @ 26.5 GHz
- HaRP™ technology enhanced
- Fast settling time
- No gate and phase lag
- No drift in insertion loss and phase
- Improved high frequency insertion loss and return loss performance with external matching
- High ESD performance of 3.0 kV HBM on all pins
- Packaging: 29 - lead 4×4 mm LGA
응용 분야
- Test and measurement
- Microwave backhaul
- Radar
C726160 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



