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ADI LTC4442EMS8E-1#TRPBF

Produttore
Cod. Prod.
LTC4442EMS8E-1#TRPBF
Cod. LCSC
C688569
Imballo
MSOP-8-EP
Numero Cliente
Attr. chiave
6V~9.5V 2.4A 2.4A MSOP-8-EP Gate Drivers RoHS
Scheda TecnicaADI LTC4442EMS8E-1#TRPBF
Conformità RoHS1 documenti disponibili
Parti alternative3
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ProduttoreADI
ImballoMSOP-8-EP
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current-
Input Logic Level - High-
Voltage - Supply6V~9.5V
Operating Temperature-40℃~+85℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)2.4A
Rise Time12ns
Fall Time8ns
FeaturesEnable shutdown;Interleaved conduction protection
Current - Output High(IOH)2.4A
Load TypeMOSFET

Descrizione

Traduzione AI

The LTC4442 is a high frequency gate driver designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance.

The LTC4442 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4442 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 42V above ground.

The LTC4442 contains undervoltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an undervoltage condition is present. The LTC4442 and LTC4442-1 have different undervoltage lockout thresholds to accommodate a wide variety of applications. An adaptive shoot-through protection feature is also built-in to prevent power loss resulting from MOSFET cross-conduction current.

The LTC4442/LTC4442-1 are available in the thermally enhanced 8-lead MSOP package.

Caratteristiche

Traduzione AI
  • Wide V Range: 6V to 9.5V
  • 38V Maximum Input Supply Voltage
  • Adaptive Shoot-Through Protection
  • 2.4A Peak Pull-Up Current
  • 5A Peak Pull-Down Current
  • 8ns TG Fall Time Driving 3000pF Load
  • 12ns TG Rise Time Driving 3000pF Load
  • Separate Supply to Match PWM Controller
  • Drives Dual N-Channel MOSFETs
  • Undervoltage Lockout
  • Thermally Enhanced MSOP Package

Applicazioni

Traduzione AI
  • Distributed Power Architectures
  • High Density Power Modules