Nexperia BUK9Y40-55B/C3,115
| Producent | |
| Nr części prod. | BUK9Y40-55B/C3,115 |
| Nr LCSC | C6869625 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 43V 70A 64W 5.6mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Nexperia BUK9Y40-55B/C3,115 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | - | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 70A | |
| Output Capacitance(Coss) | 383pF | |
| Ciss-Input Capacitance | 1.454nF | |
| Pd - Power Dissipation | 64W | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | - | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 70A | |
| Output Capacitance(Coss) | 383pF | |
| Ciss-Input Capacitance | 1.454nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 64W | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Automotive-grade N-channel MOSFET utilizing the latest Trench 9 low-ohmic superjunction technology, housed in a robust LFPAK56 package. Fully designed and qualified to AEC-Q101 requirements, delivering high performance and durability.
Funkcje
Tłumaczenie AI
- Fully compliant with AEC-Q101 automotive standard
- 175°C rated temperature for high thermal dissipation environments
- Trench 9 super-junction technology:
- Reduced cell pitch enables higher power density and efficiency in the same package size while lowering RDSon
- Improved safe operating area and avalanche capability compared to standard trench MOS
- Tight VGS(th) limits facilitate parallel MOSFET connection
- LFPAK gull-wing leads:
- High board-level reliability with mechanical stress absorption during thermal cycling, unlike conventional QFN packages
- Visual (AOI) solder inspection capability — no costly X-ray equipment required
- Easy soldering with good mechanical solder joint formation
- LFPAK copper-clip technology:
- Enhanced reliability with reduced thermal resistance Rth and RDSon
- Increased maximum current capability with improved current distribution
Zastosowania
Tłumaczenie AI
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Start-stop mild hybrid applications
- Transmission control
- Ultra-high-performance power switching
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | - | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 70A | |
| Output Capacitance(Coss) | 383pF | |
| Ciss-Input Capacitance | 1.454nF | |
| Pd - Power Dissipation | 64W | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | - | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 70A | |
| Output Capacitance(Coss) | 383pF | |
| Ciss-Input Capacitance | 1.454nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 64W | |
| Reverse Transfer Capacitance (Crss) | 54pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Automotive-grade N-channel MOSFET utilizing the latest Trench 9 low-ohmic superjunction technology, housed in a robust LFPAK56 package. Fully designed and qualified to AEC-Q101 requirements, delivering high performance and durability.
Funkcje
Tłumaczenie AI
- Fully compliant with AEC-Q101 automotive standard
- 175°C rated temperature for high thermal dissipation environments
- Trench 9 super-junction technology:
- Reduced cell pitch enables higher power density and efficiency in the same package size while lowering RDSon
- Improved safe operating area and avalanche capability compared to standard trench MOS
- Tight VGS(th) limits facilitate parallel MOSFET connection
- LFPAK gull-wing leads:
- High board-level reliability with mechanical stress absorption during thermal cycling, unlike conventional QFN packages
- Visual (AOI) solder inspection capability — no costly X-ray equipment required
- Easy soldering with good mechanical solder joint formation
- LFPAK copper-clip technology:
- Enhanced reliability with reduced thermal resistance Rth and RDSon
- Increased maximum current capability with improved current distribution
Zastosowania
Tłumaczenie AI
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Start-stop mild hybrid applications
- Transmission control
- Ultra-high-performance power switching
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

