Abbildung ähnlich
EDA-ModelleEasyEDA
EPC EPC2053
| Hersteller | |
| Herst.-Teilenr. | EPC2053 |
| LCSC-Nr. | C6614383 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 120V 48A 3.1mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS |
| Datenblatt | EPC EPC2053 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 642pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 1453pF | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 10.4pF | |
| RDS(on) | 3.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.4nC | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 642pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 1453pF |
| Typ | Beschreibung | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 10.4pF | |
| RDS(on) | 3.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.4nC | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 642pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 1453pF | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 10.4pF | |
| RDS(on) | 3.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.4nC | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | - | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 642pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 1453pF |
| Typ | Beschreibung | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 10.4pF | |
| RDS(on) | 3.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.4nC | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
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C6614383 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |