micron M29W800DT70N6E

The M29W800 is an 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that supports read, erase, and reprogram operations. Upon power-up, the memory defaults to read mode and can be accessed like a ROM or EPROM. The memory is divided into independently erasable blocks, allowing valid data to be retained while erasing obsolete data. Each block can be individually protected against accidental program or erase commands that might modify the memory contents. Program and erase commands are written to the memory's command interface. An on-chip program/erase algorithm handles all special operations required to update the memory contents. The command set for controlling the memory is compliant with JEDEC standards.

• VCC = 2.7 V to 3.6 V
• Access time: 45, 70, 90 ns
• Program time: 10 μs typical per byte/word
• 19 memory sectors, 1 boot sector (top or bottom), 2 parameter sectors and 16 main sectors
• Embedded byte/word program algorithm
• Erase suspend: suspendable, read and program another sector during erase suspend
• Unlock bypass program command
• Common interface, 4-bit protection code
• Low power consumption, standby and auto modes
• 100,000 program/erase cycles
• Electronic signature, manufacturer code: 0020h