Zdjęcia poglądowe
Modele EDAEasyEDA
TOSHIBA CUHS20S60,H3F
| Producent | |
| Nr części prod. | CUHS20S60,H3F |
| Nr LCSC | C5609184 |
| Opak. | SMD |
| Numer Klienta | |
| Klucz. cechy | DIODE SCHOTTKY 60V SMD |
| Karta Katalogowa | TOSHIBA CUHS20S60,H3F |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TOSHIBA | |
| Opak. | SMD | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@2A | |
| Reverse Leakage Current (Ir) | 650uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 10A | |
| Current - Rectified | 2A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TOSHIBA | |
| Opak. | SMD | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@2A | |
| Reverse Leakage Current (Ir) | 650uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 10A | |
| Current - Rectified | 2A |
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Zastosowania
Tłumaczenie AI
- High- Speed Switching
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TOSHIBA | |
| Opak. | SMD | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@2A | |
| Reverse Leakage Current (Ir) | 650uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 10A | |
| Current - Rectified | 2A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TOSHIBA | |
| Opak. | SMD | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@2A | |
| Reverse Leakage Current (Ir) | 650uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 10A | |
| Current - Rectified | 2A |
Pomoc i opiniePokaż podobne produkty (0) >
Zastosowania
Tłumaczenie AI
- High- Speed Switching
C5609184 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |