VBsemi Elec AP9575GM-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AP9575GM-VB |
| LCSC-Nr. | C558084 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | 60V 8A 1V 1.67W 1 P-Channel SOP-8 Single FETs, MOSFETs |
| Datenblatt | VBsemi Elec AP9575GM-VB |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 65nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 65nC@10V |
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Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- P-channel MOSFET
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7181 | $ 0.72 |
| 10+ | $ 0.7084 | $ 7.08 |
| 30+ | $ 0.7035 | $ 21.11 |
| 100+ | $ 0.697 | $ 69.70 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 65nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 65nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- P-channel MOSFET
C558084 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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