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Taiwan Semiconductor BC807-40W RFG
| Hersteller | Taiwan SemiconductorAsian Brands |
| Herst.-Teilenr. | BC807-40W RFG |
| LCSC-Nr. | C5576760 |
| Verp. | SOT-323 |
| Kundennummer | |
| Hauptmerkm. | 45V 250 500mA PNP SOT-323 Single Bipolar Transistors RoHS |
| Datenblatt |  Taiwan Semiconductor BC807-40W RFG |
| RoHS-Konformität | 2 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 700mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 700mV |
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0447 | $ 0.04 |
| 200+ | $ 0.0179 | $ 3.58 |
| 500+ | $ 0.0173 | $ 8.65 |
| 1,000+ | $ 0.017 | $ 17.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 700mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 80MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 250 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 500mA | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 700mV |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |