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EDA-ModelleEasyEDA
TI CSD16407Q5
| Hersteller | |
| Herst.-Teilenr. | CSD16407Q5 |
| LCSC-Nr. | C553152 |
| Verp. | SON-8(5x6) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 25V 100A SON-8(5x6) |
| Datenblatt | TI CSD16407Q5 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 2.08nF | |
| Pd - Power Dissipation | 3.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 1.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.66nF | |
| Gate Charge(Qg) | 13.3nC@4.5V | |
| Vgs | - | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 2.08nF | |
| Pd - Power Dissipation | 3.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 1.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.66nF | |
| Gate Charge(Qg) | 13.3nC@4.5V | |
| Vgs | - | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Merkmale
KI-Übersetzung
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- SON 5-mm x 6-mm Plastic Package
Anwendungen
KI-Übersetzung
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
- Optimized for Synchronous FET Applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.5888 | $ 3.59 |
| 10+ | $ 3.5401 | $ 35.40 |
| 30+ | $ 3.5076 | $ 105.23 |
| 100+ | $ 3.4735 | $ 347.35 |
Standardgehäuse2500/Full Reel | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 2.08nF | |
| Pd - Power Dissipation | 3.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 1.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.66nF | |
| Gate Charge(Qg) | 13.3nC@4.5V | |
| Vgs | - | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 2.08nF | |
| Pd - Power Dissipation | 3.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 1.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.66nF | |
| Gate Charge(Qg) | 13.3nC@4.5V | |
| Vgs | - | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Merkmale
KI-Übersetzung
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- SON 5-mm x 6-mm Plastic Package
Anwendungen
KI-Übersetzung
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
- Optimized for Synchronous FET Applications
C553152 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| CSD16403Q5A | TI | Ähnliche | SON-8(5x6) | 2 | $ 1.6072 | ||
| CSD17501Q5A | TI | Ähnliche | SON-8(5x6) | 2,503 | $ 1.7476 | ||
| CSD16325Q5 | TI | Ähnliche | VSON-CLIP-8(6x5) | 1 | $ 3.5601 | ||
| CSD17311Q5 | TI | Ähnliche | VSON-8-EP(5x6) | 101 | $1.2835 $1.6454 | ||
| CSD18502Q5B | TI | Ähnliche | VSON-CLIP-8(6x5) | 1,098 | $ 1.7517 |
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