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EDA-ModelleEasyEDA
Nexperia BUK9M3R3-40HX
| Hersteller | |
| Herst.-Teilenr. | BUK9M3R3-40HX |
| LCSC-Nr. | C550018 |
| Verp. | LFPAK33-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 80A LFPAK33-8 |
| Datenblatt | Nexperia BUK9M3R3-40HX |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK33-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.766nF | |
| Pd - Power Dissipation | 101W | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK33-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.766nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 101W | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
Merkmale
KI-Übersetzung
- Fully automotive qualified to AEC-Q101 at 175 °C
- Trench 9 superjunction technology: Low power losses, high power density
- LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI
- Repetitive avalanche rated
Anwendungen
KI-Übersetzung
- 12 V automotive systems
- Powertrain, chassis, body and infotainment applications
- Medium/Low power motor drive
- DC-DC systems LED lighting
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0023 | $ 1.00 |
| 10+ | $ 0.8162 | $ 8.16 |
| 30+ | $ 0.7215 | $ 21.65 |
| 100+ | $ 0.6301 | $ 63.01 |
| 500+ | $ 0.5746 | $ 287.30 |
| 1,500+ | $ 0.5452 | $ 817.80 |
Standardgehäuse1500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK33-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.766nF | |
| Pd - Power Dissipation | 101W | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK33-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.766nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 101W | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.77V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
Merkmale
KI-Übersetzung
- Fully automotive qualified to AEC-Q101 at 175 °C
- Trench 9 superjunction technology: Low power losses, high power density
- LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI
- Repetitive avalanche rated
Anwendungen
KI-Übersetzung
- 12 V automotive systems
- Powertrain, chassis, body and infotainment applications
- Medium/Low power motor drive
- DC-DC systems LED lighting
C550018 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| BUK9M5R0-40HX | Nexperia | Ähnliche | LFPAK33-8 | 0 | $ 1.688 |