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HXY MOSFET NTTFS4D9N04XMTAG-HXY product image
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HXY MOSFET NTTFS4D9N04XMTAG-HXY

Hersteller
HXY MOSFETAsian Brands
Herst.-Teilenr.
NTTFS4D9N04XMTAG-HXY
LCSC-Nr.
C54582777
Verp.
DFN-8L(3x3)
Kundennummer
Hauptmerkm.
40V 70A 52W 4.2mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DatenblattHXY MOSFET NTTFS4D9N04XMTAG-HXY
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerHXY MOSFET
Verp.DFN-8L(3x3)
ConfigurationStandalone
Drain to Source Voltage40V
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)70A
Ciss-Input Capacitance2.8nF
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss)152pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Gate Charge(Qg)25nC@4.5V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel
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Beschreibung

KI-Übersetzung

The NTTFS4D9N04XMTAG utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Merkmale

KI-Übersetzung
  • Drain-source voltage (VDS) = 40V, drain current (ID) = 70A
  • On-resistance (RDS(ON)) < 5.5mΩ at gate-source voltage (VGS) = 10V

Anwendungen

KI-Übersetzung
  • Battery protection
  • Load switch
  • Uninterruptible power supply