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EDA-ModelleEasyEDA
MCC MCU30N02-TP
| Hersteller | |
| Herst.-Teilenr. | MCU30N02-TP |
| LCSC-Nr. | C5346834 |
| Verp. | DPAK |
| Kundennummer | |
| Hauptmerkm. | 30W 20V 30A 5.6mΩ@4.5V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS |
| Datenblatt | MCC MCU30N02-TP |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DPAK | |
| Output Capacitance(Coss) | 305pF | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 5.6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DPAK | |
| Output Capacitance(Coss) | 305pF | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 5.6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
AGM40P100H combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low drain-to-source on-resistance. The device is ideally suited for load switching and battery protection applications.
Merkmale
KI-Übersetzung
- Trench power low-voltage MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low RDS(ON)
- Epoxy meets UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1
- For halogen-free products, add suffix "-HF"
- Lead-free finish / RoHS compliant (suffix "P" denotes RoHS compliance; see ordering information for details)
Anwendungen
KI-Übersetzung
- MB/VGA core voltage
- Secondary synchronous rectifier for switching power supplies
- Point-of-load applications
- Brushless DC motor driver
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DPAK | |
| Output Capacitance(Coss) | 305pF | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 5.6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DPAK | |
| Output Capacitance(Coss) | 305pF | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 5.6mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM40P100H combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low drain-to-source on-resistance. The device is ideally suited for load switching and battery protection applications.
Merkmale
KI-Übersetzung
- Trench power low-voltage MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low RDS(ON)
- Epoxy meets UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1
- For halogen-free products, add suffix "-HF"
- Lead-free finish / RoHS compliant (suffix "P" denotes RoHS compliance; see ordering information for details)
Anwendungen
KI-Übersetzung
- MB/VGA core voltage
- Secondary synchronous rectifier for switching power supplies
- Point-of-load applications
- Brushless DC motor driver
C5346834 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |