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R+O HL7002KD

Hersteller
R+OAsian Brands
Herst.-Teilenr.
HL7002KD
LCSC-Nr.
C53155118
Verp.
DFN1006-3L
Kundennummer
Hauptmerkm.
300mW 60V 300mA 3Ω@10V 1 N-channel N-Channel DFN1006-3L Single FETs, MOSFETs
DatenblattR+O HL7002KD
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerR+O
Verp.DFN1006-3L
Output Capacitance(Coss)18pF
Ciss-Input Capacitance27pF
Pd - Power Dissipation300mW
ConfigurationStandalone
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)300mA
Reverse Transfer Capacitance (Crss)7pF
RDS(on)3Ω@10V
Number1 N-channel
Gate Charge(Qg)1.7nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))1.4V
TypeN-Channel

Beschreibung

KI-Übersetzung

This product is a DFN1006-3L plastic-packaged MOSFET with a drain-source voltage of 60 V and a drain current of 0.3 A.

Merkmale

KI-Übersetzung
  • V_DSS = 60 V
  • I_D = 0.3 A
  • R_DS(on) @ V_GS = 10 V < 3 Ω
  • R_DS(on) @ V_GS = 4.5 V < 4 Ω
  • Fast switching
  • Low gate charge and low R_DS(ON)
  • Low reverse transfer capacitance

Anwendungen

KI-Übersetzung
  • Load switch
  • PWM applications