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DIODES DMG3415UFY4Q-7

Hersteller
DIODES
Herst.-Teilenr.
DMG3415UFY4Q-7
LCSC-Nr.
C5124975
Verp.
X2-DFN2015-3
Kundennummer
Hauptmerkm.
MOSFET P-CH 16V 2.5A X2-DFN2015-3
DatenblattDIODES DMG3415UFY4Q-7
RoHS-Konformität5 Dokumente verfügbar
Alternativteile1
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerDIODES
Verp.X2-DFN2015-3
Output Capacitance(Coss)152pF
Ciss-Input Capacitance282pF
Pd - Power Dissipation650mW
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage16V
Current - Continuous Drain(Id)2.5A
Reverse Transfer Capacitance (Crss)38pF
RDS(on)39mΩ@4.5V
Number1 P-Channel
Gate Charge(Qg)10nC@4.5V
Vgs±8V
Gate Threshold Voltage (Vgs(th))1V
TypeP-Channel
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Beschreibung

KI-Übersetzung

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Merkmale

KI-Übersetzung
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 3kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability PPAP Capable

Anwendungen

KI-Übersetzung
  • Backlighting
  • Power Management Functions
  • DC-DC Converters