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Modele EDAEasyEDA
HUASHUO HSK7P10
| Producent | HUASHUOAsian Brands |
| Nr części prod. | HSK7P10 |
| Nr LCSC | C51025834 |
| Opak. | SOT-89 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 100V 7A SOT-89 |
| Karta Katalogowa | HUASHUO HSK7P10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 7A | |
| Output Capacitance(Coss) | 58pF | |
| Ciss-Input Capacitance | 1.22nF | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 7A | |
| Output Capacitance(Coss) | 58pF | |
| Ciss-Input Capacitance | 1.22nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
HSK7P10 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSK7P10 complies with RoHS and green product requirements, and has passed full-function reliability certification.
Funkcje
Tłumaczenie AI
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Green/RoHS-compliant devices available
- Advanced high cell density trench technology
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 7A | |
| Output Capacitance(Coss) | 58pF | |
| Ciss-Input Capacitance | 1.22nF | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 7A | |
| Output Capacitance(Coss) | 58pF | |
| Ciss-Input Capacitance | 1.22nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
HSK7P10 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSK7P10 complies with RoHS and green product requirements, and has passed full-function reliability certification.
Funkcje
Tłumaczenie AI
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Green/RoHS-compliant devices available
- Advanced high cell density trench technology
C51025834 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |