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EDA-ModelleEasyEDA
VBsemi Elec DMS3014SFGQ-13-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | DMS3014SFGQ-13-VB |
| LCSC-Nr. | C50313902 |
| Verp. | DFN-8(3x3) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 30A DFN-8(3x3) |
| Datenblatt | VBsemi Elec DMS3014SFGQ-13-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | DFN-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 236pF | |
| Ciss-Input Capacitance | 900pF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 13mΩ@10V;19mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V;9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | DFN-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 236pF | |
| Ciss-Input Capacitance | 900pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 13mΩ@10V;19mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V;9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free
- Trench power MOSFET
- 100% Rg and UIS tested
Anwendungen
KI-Übersetzung
- DC-DC Conversion - Low-Side Switch
- Notebook Computers
- Gaming
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | DFN-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 236pF | |
| Ciss-Input Capacitance | 900pF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 13mΩ@10V;19mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V;9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | DFN-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 236pF | |
| Ciss-Input Capacitance | 900pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 13mΩ@10V;19mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V;9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free
- Trench power MOSFET
- 100% Rg and UIS tested
Anwendungen
KI-Übersetzung
- DC-DC Conversion - Low-Side Switch
- Notebook Computers
- Gaming
C50313902 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |