15% OFF
- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
HXY MOSFET WPM1481-6-HXY
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | WPM1481-6-HXY |
| Nr LCSC | C50177036 |
| Opak. | DFN2X2B-6L |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 18V 16A DFN2X2B-6L |
| Karta Katalogowa | HXY MOSFET WPM1481-6-HXY |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN2X2B-6L | |
| Output Capacitance(Coss) | 670pF | |
| Ciss-Input Capacitance | 2.6nF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 16A | |
| Reverse Transfer Capacitance (Crss) | 560pF | |
| RDS(on) | 11mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 35nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN2X2B-6L | |
| Output Capacitance(Coss) | 670pF | |
| Ciss-Input Capacitance | 2.6nF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 16A | |
| Reverse Transfer Capacitance (Crss) | 560pF | |
| RDS(on) | 11mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 35nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN2X2B-6L | |
| Output Capacitance(Coss) | 670pF | |
| Ciss-Input Capacitance | 2.6nF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 16A | |
| Reverse Transfer Capacitance (Crss) | 560pF | |
| RDS(on) | 11mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 35nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN2X2B-6L | |
| Output Capacitance(Coss) | 670pF | |
| Ciss-Input Capacitance | 2.6nF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 16A | |
| Reverse Transfer Capacitance (Crss) | 560pF | |
| RDS(on) | 11mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 35nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
C50177036 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |