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ElecSuper CSD18540Q5B(ES)

Produttore
ElecSuperAsian Brands
Cod. Prod.
CSD18540Q5B(ES)
Cod. LCSC
C49108747
Imballo
PDFN-8L(5x6)
Numero Cliente
Attr. chiave
MOSFET N-CH 60V 190A PDFN-8L(5x6)
Scheda TecnicaElecSuper CSD18540Q5B(ES)
Conformità RoHS1 documenti disponibili
Parti alternative4
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreElecSuper
ImballoPDFN-8L(5x6)
Drain to Source Voltage60V
Output Capacitance(Coss)2.2nF
Current - Continuous Drain(Id)190A
Ciss-Input Capacitance5.44nF
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss)135pF
RDS(on)1.9mΩ@10V;2.6mΩ@4.5V
Number1 N-channel
Gate Charge(Qg)102nC@10V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel
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Descrizione

Traduzione AI

CSD18540Q5B(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product CSD18540Q5B(ES) is lead-free.

Caratteristiche

Traduzione AI
  • 60V, RDS(ON) = 1.9 mΩ (typical) @ VGS = 10V
  • RDS(ON) = 2.6 mΩ (typical) @ VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applicazioni

Traduzione AI
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion