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VBsemi Elec IRFP350LCPBF-VB
| 제조업체 | VBsemi ElecAsian Brands |
| 제조사 품번 | IRFP350LCPBF-VB |
| LCSC 번호 | C45662457 |
| 포장 | TO-247AC |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 500V 40A TO-247AC |
| 데이터시트 | VBsemi Elec IRFP350LCPBF-VB |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-247AC | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 960pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 8.31nF | |
| Pd - Power Dissipation | 530W | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 350nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-247AC | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 960pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 8.31nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 530W | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 350nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage, and current
- Low RDS(on)
- RoHS compliant with directive 2002/95/EC
응용 분야
AI 번역
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switching
- Hard switching and high-frequency circuits
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-247AC | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 960pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 8.31nF | |
| Pd - Power Dissipation | 530W | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 350nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-247AC | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 960pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 8.31nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 530W | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 350nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage, and current
- Low RDS(on)
- RoHS compliant with directive 2002/95/EC
응용 분야
AI 번역
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switching
- Hard switching and high-frequency circuits
C45662457 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |