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EDA-ModelleEasyEDA
HXY MOSFET HC2M0045170P
| Hersteller | HXY MOSFETAsian Brands |
| Herst.-Teilenr. | HC2M0045170P |
| LCSC-Nr. | C41428802 |
| Verp. | TO-247-4L |
| Kundennummer | |
| Hauptmerkm. | SICFET N-CH 1.7kV 75A TO-247-4L |
| Datenblatt |  HXY MOSFET HC2M0045170P |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
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| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 58.9736 | $ 58.97 |
| 30+ | $ 56.148 | $ 1684.44 |
Standardgehäuse30/Full Tube | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
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C41428802 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |