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HXY MOSFET HC2M0045170P
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | HC2M0045170P |
| Nr LCSC | C41428802 |
| Opak. | TO-247-4L |
| Numer Klienta | |
| Klucz. cechy | SICFET N-CH 1.7kV 75A TO-247-4L |
| Karta Katalogowa | HXY MOSFET HC2M0045170P |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 58.9736 | $ 58.97 |
| 30+ | $ 56.148 | $ 1684.44 |
Standardowa Obudowa30/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.7kV | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Output Capacitance(Coss) | 171pF |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 338W | |
| RDS(on) | 70mΩ@20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.455nF | |
| Gate Charge(Qg) | 204nC | |
| Type | N-Channel |
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C41428802 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |