Nexperia NHUMB10X
| Manufacturer | |
| MPN | NHUMB10X |
| LCSC Part # | C3588861 |
| Packaging | TSSOP-6 |
| Customer # | |
| Key Attributes | 100 350mW 100mA 80V 2 PNP Pre-Biased Transistors TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet | Nexperia NHUMB10X |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 350mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 350mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
PNP/PNP resistor-equipped transistor (RET) series in ultra-compact SOT363 (SC-88) SMD plastic package.
Features
AI Translation
- Output current capability up to 100 mA
- High breakdown voltage
- Built-in resistor
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applications
AI Translation
- Digital applications
- Low-cost replacement for BC856 series in digital applications
- Control IC inputs
- Switching loads
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 350mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 350mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
PNP/PNP resistor-equipped transistor (RET) series in ultra-compact SOT363 (SC-88) SMD plastic package.
Features
AI Translation
- Output current capability up to 100 mA
- High breakdown voltage
- Built-in resistor
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applications
AI Translation
- Digital applications
- Low-cost replacement for BC856 series in digital applications
- Control IC inputs
- Switching loads
C3588861 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

