onsemi IRFS830B
| Hersteller | |
| Herst.-Teilenr. | IRFS830B |
| LCSC-Nr. | C3290553 |
| Verp. | TO-220F-3 |
| Kundennummer | |
| Hauptmerkm. | 73W 500V 4.5A 1.5Ω@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi IRFS830B |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 73W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 73W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Beschreibung
These N-channel enhancement-mode power MOSFETs are manufactured using a proprietary planar DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies, power factor correction, and half-bridge-based electronic lamp ballasts.
Merkmale
- 4.5A, 500V, R DS(on) = 1.5Ω at V GS = 10V
- Low gate charge (typical 27nC)
- Low C rss (typical 17pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Anwendungen
- Hard-switching topologies
- Power Factor Correction (PFC)
- Switched-Mode Power Supply (SMPS)
- Computing
- Silver box/ATX PC power supplies
- Lighting
- Two-stage LED lighting
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 73W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 73W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Beschreibung
These N-channel enhancement-mode power MOSFETs are manufactured using a proprietary planar DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies, power factor correction, and half-bridge-based electronic lamp ballasts.
Merkmale
- 4.5A, 500V, R DS(on) = 1.5Ω at V GS = 10V
- Low gate charge (typical 27nC)
- Low C rss (typical 17pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Anwendungen
- Hard-switching topologies
- Power Factor Correction (PFC)
- Switched-Mode Power Supply (SMPS)
- Computing
- Silver box/ATX PC power supplies
- Lighting
- Two-stage LED lighting
C3290553 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

