TI RFP15N12
| Produttore | |
| Cod. Prod. | RFP15N12 |
| Cod. LCSC | C3290379 |
| Imballo | TO-220-3 |
| Numero Cliente | |
| Attr. chiave | N-Channel, Current:15A, Voltage:120V |
| Scheda Tecnica | TI RFP15N12 |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 750pF | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss) | 350pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 750pF | |
| Current - Continuous Drain(Id) | 15A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss) | 350pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descrizione
RFM15N12, RFM15N15, RFP15N12, and RFP15N15 are n-channel enhancement-mode silicon-gate power MOSFETs designed for applications including switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high-speed operation and low gate drive power. These devices can be driven directly by ICs. The RFM series features a JEDEC TO-204AA steel package, while the RFP series features a JEDEC TO-220AB plastic package.
Caratteristiche
- 15A, 120V and 150V
- On-resistance rDS(on) = 0.15Ω
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
- Majority carrier device
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.1712 | $ 1.17 |
| 200+ | $ 0.4537 | $ 90.74 |
| 500+ | $ 0.4383 | $ 219.15 |
| 1,000+ | $ 0.4305 | $ 430.50 |
Package Standard50/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 750pF | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss) | 350pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 750pF | |
| Current - Continuous Drain(Id) | 15A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss) | 350pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descrizione
RFM15N12, RFM15N15, RFP15N12, and RFP15N15 are n-channel enhancement-mode silicon-gate power MOSFETs designed for applications including switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high-speed operation and low gate drive power. These devices can be driven directly by ICs. The RFM series features a JEDEC TO-204AA steel package, while the RFP series features a JEDEC TO-220AB plastic package.
Caratteristiche
- 15A, 120V and 150V
- On-resistance rDS(on) = 0.15Ω
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
- Majority carrier device
C3290379 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| IPP60R180C7XKSA1 | Infineon | Simili | TO-220-3 | 12 | $ 2.8711 | ||
| IRFB38N20D | OSEN | Simili | TO-220 | 46 | $ 0.6636 | ||
| SVF20N60F | Hangzhou Silan Microelectronics | Simili | TO-220 | 522 | $ 1.4531 | ||
| STP33N65M2 | ST | Simili | TO-220 | 10 | $ 14.2236 | ||
| STP26NM60N | ST | Simili | TO-220 | 1,413 | $ 2.2956 |