Ampleon BLA1011-200
| Hersteller | |
| Herst.-Teilenr. | BLA1011-200 |
| LCSC-Nr. | C3290131 |
| Verp. | SOT-502A |
| Kundennummer | |
| Hauptmerkm. | LDMOS Transistor, Current:200W, Voltage:75V |
| Datenblatt | Ampleon BLA1011-200 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | Ampleon | |
| Verp. | SOT-502A | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 10A | |
| RDS(on) | 60mΩ@9V | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Number | - | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | Ampleon | |
| Verp. | SOT-502A | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 10A | |
| RDS(on) | 60mΩ@9V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Temperature | - | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Number | - | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
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Beschreibung
KI-Übersetzung
200 W LDMOS power transistor for transmitter applications in the 1030 MHz to 1090 MHz frequency range.
Merkmale
KI-Übersetzung
- Typical pulsed Class AB performance at 1030 MHz to 1090 MHz, 36 V supply voltage, and 150 mA IDq:
- Load power ≥ 200 W
- Gain ≥ 13 dB
- Efficiency ≥ 45%
- Rise time ≤ 50 ns
- Fall time ≤ 50 ns
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting flange eliminates DC isolator and reduces common-mode inductance
Anwendungen
KI-Übersetzung
- Electronic transmitter applications in the 1030 MHz to 1090 MHz frequency range.
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | Ampleon | |
| Verp. | SOT-502A | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 10A | |
| RDS(on) | 60mΩ@9V | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Number | - | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | Ampleon | |
| Verp. | SOT-502A | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 10A | |
| RDS(on) | 60mΩ@9V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Temperature | - | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Number | - | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
200 W LDMOS power transistor for transmitter applications in the 1030 MHz to 1090 MHz frequency range.
Merkmale
KI-Übersetzung
- Typical pulsed Class AB performance at 1030 MHz to 1090 MHz, 36 V supply voltage, and 150 mA IDq:
- Load power ≥ 200 W
- Gain ≥ 13 dB
- Efficiency ≥ 45%
- Rise time ≤ 50 ns
- Fall time ≤ 50 ns
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting flange eliminates DC isolator and reduces common-mode inductance
Anwendungen
KI-Übersetzung
- Electronic transmitter applications in the 1030 MHz to 1090 MHz frequency range.
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

