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EDA 모델EasyEDA
onsemi FDMS8570S
| 제조업체 | |
| 제조사 품번 | FDMS8570S |
| LCSC 번호 | C3289568 |
| 포장 | PQFN-8(5x6) |
| 고객 번호 | |
| 주요 제원 | N-Channel, 60A, 25V |
| 데이터시트 | onsemi FDMS8570S |
| RoHS 준수 | 3개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | PQFN-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 662pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.825nF | |
| Pd - Power Dissipation | 48W | |
| Reverse Transfer Capacitance (Crss) | 94pF | |
| RDS(on) | 3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | PQFN-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 662pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.825nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 48W | |
| Reverse Transfer Capacitance (Crss) | 94pF | |
| RDS(on) | 3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This N-channel SyncFET™ is manufactured using the advanced PowerTrench® process. Combining advances in silicon and packaging technology, it delivers the lowest on-resistance r<sub>DS(on)</sub> while maintaining an extremely low junction-to-ambient thermal resistance for excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.
주요 특징
AI 번역
- Maximum on-resistance rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
- Maximum on-resistance rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
- High-performance technology for ultra-low rDS(on)
- Integrated SyncFET™ Schottky body diode
- RoHS compliant
응용 분야
AI 번역
- Synchronous rectifier for DC/DC converters
- Telecom secondary-side rectification
- High-end server/workstation Vcore low-side applications
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 0.5632 | $ 0.56 |
| 200+ | $ 0.2192 | $ 43.84 |
| 500+ | $ 0.2114 | $ 105.70 |
| 1,000+ | $ 0.2068 | $ 206.80 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
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제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | PQFN-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 662pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.825nF | |
| Pd - Power Dissipation | 48W | |
| Reverse Transfer Capacitance (Crss) | 94pF | |
| RDS(on) | 3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | PQFN-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 662pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.825nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 48W | |
| Reverse Transfer Capacitance (Crss) | 94pF | |
| RDS(on) | 3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This N-channel SyncFET™ is manufactured using the advanced PowerTrench® process. Combining advances in silicon and packaging technology, it delivers the lowest on-resistance r<sub>DS(on)</sub> while maintaining an extremely low junction-to-ambient thermal resistance for excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.
주요 특징
AI 번역
- Maximum on-resistance rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
- Maximum on-resistance rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
- High-performance technology for ultra-low rDS(on)
- Integrated SyncFET™ Schottky body diode
- RoHS compliant
응용 분야
AI 번역
- Synchronous rectifier for DC/DC converters
- Telecom secondary-side rectification
- High-end server/workstation Vcore low-side applications
C3289568 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| IRFH5302TRPBF | Infineon | 유사 제품 | PQFN-8(5x6) | 6,951 | $ 0.77 | ||
| IRFH7446TRPBF | Infineon | 유사 제품 | PQFN-8(5x6) | 1,897 | $ 0.7323 | ||
| FDMS86101DC | onsemi | 유사 제품 | PQFN-8(5x6) | 2,925 | $ 0.5929 | ||
| IRFH5300TRPBF | Infineon | 유사 제품 | PQFN-8(5x6) | 1,927 | $ 0.6667 | ||
| NTMFS011N15MC | onsemi | 유사 제품 | FQFN-8(5x6) | 4 | $5.6936 $13.5561 |