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EDA-ModelleEasyEDA
Transphorm TP65H050WS
| Hersteller | |
| Herst.-Teilenr. | TP65H050WS |
| LCSC-Nr. | C3281052 |
| Verp. | TO-247-3 |
| Kundennummer | |
| Hauptmerkm. | 650V 34A 119W 60mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datenblatt | Transphorm TP65H050WS |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Transphorm | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 34A | |
| Ciss-Input Capacitance | 1000pF | |
| Technology | E-mode | |
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Transphorm | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 34A | |
| Ciss-Input Capacitance | 1000pF |
| Typ | Beschreibung | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Transphorm | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 34A | |
| Ciss-Input Capacitance | 1000pF | |
| Technology | E-mode | |
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Transphorm | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 34A | |
| Ciss-Input Capacitance | 1000pF |
| Typ | Beschreibung | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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C3281052 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |