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onsemi IRFS630B

Hersteller
onsemi
Herst.-Teilenr.
IRFS630B
LCSC-Nr.
C3275918
Verp.
-
Kundennummer
Hauptmerkm.
N-Channel, Current: 9.0A, Voltage: 200V
Datenblattonsemi IRFS630B
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Herstelleronsemi
Verp.-
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)9A
Ciss-Input Capacitance720pF
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss)29pF
RDS(on)400mΩ@10V
Gate Charge(Qg)29nC@10V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Beschreibung

KI-Übersetzung

These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters, switching power supplies, DC-AC converters for UPS applications, and motor control.

Merkmale

KI-Übersetzung
  • 9.0A, 200V, R DS(on) = 0.4Ω at VGS = 10V
  • Low gate charge (typical 22nC)
  • Low Crss (typical 22pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Anwendungen

KI-Übersetzung
  • High-efficiency switching DC/DC converters
  • Switching power supplies
  • DC-AC converters for UPS
  • Motor control