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VISHAY BPV11
| Hersteller | |
| Herst.-Teilenr. | BPV11 |
| LCSC-Nr. | C3210895 |
| Verp. | Through Hole |
| Kundennummer | |
| Hauptmerkm. | 10mA 70V 850nm 15° 50nA Through Hole Phototransistors RoHS |
| Datenblatt | VISHAY BPV11 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Sensors, Transducers/Optical Sensors/Phototransistors | |
| Hersteller | VISHAY | |
| Verp. | Through Hole | |
| Current - Collector(Ic) | 10mA | |
| Collector - Emitter Voltage VCEO | 70V | |
| Peak Wavelength | 850nm | |
| Viewing Angle | 15° | |
| Dark Current | 50nA | |
| Operating Temperature | -40℃~+100℃ | |
| Pd - Power Dissipation | 150mW |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Sensors, Transducers/Optical Sensors/Phototransistors | |
| Hersteller | VISHAY | |
| Verp. | Through Hole | |
| Current - Collector(Ic) | 10mA | |
| Collector - Emitter Voltage VCEO | 70V |
| Typ | Beschreibung | |
|---|---|---|
| Peak Wavelength | 850nm | |
| Viewing Angle | 15° | |
| Dark Current | 50nA | |
| Operating Temperature | -40℃~+100℃ | |
| Pd - Power Dissipation | 150mW |
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Beschreibung
KI-Übersetzung
BPV11 is a silicon NPN phototransistor in a transparent T-1 3/4 plastic package with base terminal, featuring high radiant sensitivity. It is sensitive to visible and near-infrared radiation.
Merkmale
KI-Übersetzung
- Package Type: Through-Hole
- Package Form: T-1 3/4 Lead-Free
- Dimensions (mm): 5mm diameter
- High Photosensitivity
- High Radiant Sensitivity
- Suitable for Visible and Near-Infrared Radiation
- Fast Response Time
- Half-Sensitivity Angle: φ = ±15°
- Base Terminal Connection
Anwendungen
KI-Übersetzung
- Industrial electronic circuit, measurement, and control detectors
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Sensors, Transducers/Optical Sensors/Phototransistors | |
| Hersteller | VISHAY | |
| Verp. | Through Hole | |
| Current - Collector(Ic) | 10mA | |
| Collector - Emitter Voltage VCEO | 70V | |
| Peak Wavelength | 850nm | |
| Viewing Angle | 15° | |
| Dark Current | 50nA | |
| Operating Temperature | -40℃~+100℃ | |
| Pd - Power Dissipation | 150mW |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Sensors, Transducers/Optical Sensors/Phototransistors | |
| Hersteller | VISHAY | |
| Verp. | Through Hole | |
| Current - Collector(Ic) | 10mA | |
| Collector - Emitter Voltage VCEO | 70V |
| Typ | Beschreibung | |
|---|---|---|
| Peak Wavelength | 850nm | |
| Viewing Angle | 15° | |
| Dark Current | 50nA | |
| Operating Temperature | -40℃~+100℃ | |
| Pd - Power Dissipation | 150mW |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
BPV11 is a silicon NPN phototransistor in a transparent T-1 3/4 plastic package with base terminal, featuring high radiant sensitivity. It is sensitive to visible and near-infrared radiation.
Merkmale
KI-Übersetzung
- Package Type: Through-Hole
- Package Form: T-1 3/4 Lead-Free
- Dimensions (mm): 5mm diameter
- High Photosensitivity
- High Radiant Sensitivity
- Suitable for Visible and Near-Infrared Radiation
- Fast Response Time
- Half-Sensitivity Angle: φ = ±15°
- Base Terminal Connection
Anwendungen
KI-Übersetzung
- Industrial electronic circuit, measurement, and control detectors
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541410000 |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541410000 |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |