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Modelli EDAEasyEDA
Infineon AUIRGSL30B60K-IR
| Produttore | |
| Cod. Prod. | AUIRGSL30B60K-IR |
| Cod. LCSC | C3193980 |
| Imballo | TO-262 |
| Numero Cliente | |
| Attr. chiave | 370W 78A 600V NPT (Non-Punch Through) TO-262 Single IGBTs RoHS |
| Scheda Tecnica | Infineon AUIRGSL30B60K-IR |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-262 | |
| Td(off) | 185ns;205ns | |
| Pd - Power Dissipation | 370W | |
| Td(on) | 46ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.95V;2.4V;2.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 825uJ | |
| Turn-On Energy (Eon) | 350uJ | |
| Input Capacitance(Cies) | 1.75nF | |
| Output Capacitance(Coes) | 160pF | |
| Gate Charge(Qg) | 102nC@400V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-262 | |
| Td(off) | 185ns;205ns | |
| Pd - Power Dissipation | 370W | |
| Td(on) | 46ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | NPT (Non-Punch Through) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.95V;2.4V;2.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 825uJ | |
| Turn-On Energy (Eon) | 350uJ | |
| Input Capacitance(Cies) | 1.75nF | |
| Output Capacitance(Coes) | 160pF | |
| Gate Charge(Qg) | 102nC@400V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Low V<sub>CE(on)</sub> non-punch-through IGBT technology
- 10μs short-circuit capability
- Square reverse bias safe operating area (RBSOA)
- Positive V<sub>CE(on)</sub> temperature coefficient
- Maximum junction temperature rating of 175°C
- Lead-free, RoHS compliant
- Qualified for automotive applications
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-262 | |
| Td(off) | 185ns;205ns | |
| Pd - Power Dissipation | 370W | |
| Td(on) | 46ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.95V;2.4V;2.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 825uJ | |
| Turn-On Energy (Eon) | 350uJ | |
| Input Capacitance(Cies) | 1.75nF | |
| Output Capacitance(Coes) | 160pF | |
| Gate Charge(Qg) | 102nC@400V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-262 | |
| Td(off) | 185ns;205ns | |
| Pd - Power Dissipation | 370W | |
| Td(on) | 46ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | NPT (Non-Punch Through) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.95V;2.4V;2.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 825uJ | |
| Turn-On Energy (Eon) | 350uJ | |
| Input Capacitance(Cies) | 1.75nF | |
| Output Capacitance(Coes) | 160pF | |
| Gate Charge(Qg) | 102nC@400V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Low V<sub>CE(on)</sub> non-punch-through IGBT technology
- 10μs short-circuit capability
- Square reverse bias safe operating area (RBSOA)
- Positive V<sub>CE(on)</sub> temperature coefficient
- Maximum junction temperature rating of 175°C
- Lead-free, RoHS compliant
- Qualified for automotive applications
C3193980 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |