Littelfuse/IXYS IXA4IF1200UC-TUB

Producent	Littelfuse/IXYS
Nr części prod.	IXA4IF1200UC-TUB
Nr LCSC	C3193970
Opak.	TO-252AA
Numer Klienta
Klucz. cechy	45W 9A 1.2kV PT (Punch-Through) TO-252AA Single IGBTs RoHS
Karta Katalogowa	Littelfuse/IXYS IXA4IF1200UC-TUB
Zgodność z RoHS	1 dokumentów dostępnych
Części alternatywne	5

Specyfikacje Produktu

Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Producent	Littelfuse/IXYS
Opak.	TO-252AA
Td(off)	250ns
Pd - Power Dissipation	45W
Td(on)	70ns
Current - Collector(Ic)	9A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	PT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,3A
Operating Temperature	-40℃~+125℃
Vce Saturation(VCE(sat))	1.8V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	350ns
Switching Energy(Eoff)	300uJ
Turn-On Energy (Eon)	400uJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	12nC

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Producent	Littelfuse/IXYS
Opak.	TO-252AA
Td(off)	250ns
Pd - Power Dissipation	45W
Td(on)	70ns
Current - Collector(Ic)	9A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	PT (Punch-Through)

Typ	Opis
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,3A
Operating Temperature	-40℃~+125℃
Vce Saturation(VCE(sat))	1.8V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	350ns
Switching Energy(Eoff)	300uJ
Turn-On Energy (Eon)	400uJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	12nC

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Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Producent	Littelfuse/IXYS
Opak.	TO-252AA
Td(off)	250ns
Pd - Power Dissipation	45W
Td(on)	70ns
Current - Collector(Ic)	9A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	PT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,3A
Operating Temperature	-40℃~+125℃
Vce Saturation(VCE(sat))	1.8V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	350ns
Switching Energy(Eoff)	300uJ
Turn-On Energy (Eon)	400uJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	12nC

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Producent	Littelfuse/IXYS
Opak.	TO-252AA
Td(off)	250ns
Pd - Power Dissipation	45W
Td(on)	70ns
Current - Collector(Ic)	9A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	PT (Punch-Through)

Typ	Opis
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,3A
Operating Temperature	-40℃~+125℃
Vce Saturation(VCE(sat))	1.8V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	350ns
Switching Energy(Eoff)	300uJ
Turn-On Energy (Eon)	400uJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	12nC