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EDA-ModelleEasyEDA
NATLINEAR NP6003VR
| Hersteller | NATLINEARAsian Brands |
| Herst.-Teilenr. | NP6003VR |
| LCSC-Nr. | C2991131 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 3A SOT-23 |
| Datenblatt | NATLINEAR NP6003VR |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NATLINEAR | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 21pF | |
| Ciss-Input Capacitance | 175pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NATLINEAR | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 21pF | |
| Ciss-Input Capacitance | 175pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
The NP6003VR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Merkmale
KI-Übersetzung
- VDS = 60V, ID = 3A
- RDS(ON) = 76mΩ @ VGS = 10V (Typ.)
- RDS(ON) = 88mΩ @ VGS = 4.5V (Typ.)
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Low gate to drain charge to reduce switching losses.
Anwendungen
KI-Übersetzung
- Power switching application.
- Hard switched and high frequency circuits.
- Uninterruptible power supply.
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NATLINEAR | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 21pF | |
| Ciss-Input Capacitance | 175pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NATLINEAR | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 21pF | |
| Ciss-Input Capacitance | 175pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The NP6003VR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Merkmale
KI-Übersetzung
- VDS = 60V, ID = 3A
- RDS(ON) = 76mΩ @ VGS = 10V (Typ.)
- RDS(ON) = 88mΩ @ VGS = 4.5V (Typ.)
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Low gate to drain charge to reduce switching losses.
Anwendungen
KI-Übersetzung
- Power switching application.
- Hard switched and high frequency circuits.
- Uninterruptible power supply.
C2991131 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |