- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
XIN FEI HONG FH3401B
| Producent | XIN FEI HONGAsian Brands |
| Nr części prod. | FH3401B |
| Nr LCSC | C2929025 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 30V 4.2A SOT-23 |
| Karta Katalogowa | XIN FEI HONG FH3401B |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 950pF | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 72mΩ@2.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 950pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 72mΩ@2.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
FH3401B utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.
Funkcje
Tłumaczenie AI
- Drain-source voltage VDS = -30 V, drain current ID = -4.2 A
- RDS(ON) < 45 mΩ at VGS = -10 V
- RDS(ON) < 53 mΩ at VGS = -4.5 V
- RDS(ON) < 72 mΩ at VGS = -2.5 V
- High power and large current handling capability
- Lead-free compliant
- Surface mount package
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 3,000
3,000 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0431 | $ 0.43 |
| 100+ | $ 0.0337 | $ 3.37 |
| 300+ | $ 0.029 | $ 8.70 |
| 3,000+ | $ 0.0255 | $ 76.50 |
| 6,000+ | $ 0.0227 | $ 136.20 |
| 9,000+ | $ 0.0213 | $ 191.70 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 950pF | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 72mΩ@2.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XIN FEI HONG | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 950pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 72mΩ@2.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
FH3401B utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.
Funkcje
Tłumaczenie AI
- Drain-source voltage VDS = -30 V, drain current ID = -4.2 A
- RDS(ON) < 45 mΩ at VGS = -10 V
- RDS(ON) < 53 mΩ at VGS = -4.5 V
- RDS(ON) < 72 mΩ at VGS = -2.5 V
- High power and large current handling capability
- Lead-free compliant
- Surface mount package
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management
C2929025 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |