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EDA-ModelleEasyEDA
TI CSD19535KTT
| Hersteller | |
| Herst.-Teilenr. | CSD19535KTT |
| LCSC-Nr. | C2869105 |
| Verp. | TO-263-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 100V 200A TO-263-3 |
| Datenblatt |  TI CSD19535KTT |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternative Teile | 9 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.51nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.93nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.51nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.93nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This 100V, 2.8mΩ D2PAK (TO-263) power MOSFET is designed to significantly reduce losses in power conversion applications.
Merkmale
KI-Übersetzung
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free lead finish
- RoHS compliant
- Halogen-free
- D2PAK plastic package
Anwendungen
KI-Übersetzung
- Hot swap
- Motor control
- Secondary-side synchronous rectifier
Vorrätig: 554
554 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.0171 | $ 4.02 |
| 10+ | $ 3.4703 | $ 34.70 |
| 30+ | $ 3.1455 | $ 94.37 |
| 100+ | $ 2.8157 | $ 281.57 |
| 500+ | $ 2.6639 | $ 1331.95 |
| 1,000+ | $ 2.5954 | $ 2595.40 |
Standardgehäuse500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.51nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.93nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.51nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.93nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This 100V, 2.8mΩ D2PAK (TO-263) power MOSFET is designed to significantly reduce losses in power conversion applications.
Merkmale
KI-Übersetzung
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free lead finish
- RoHS compliant
- Halogen-free
- D2PAK plastic package
Anwendungen
KI-Übersetzung
- Hot swap
- Motor control
- Secondary-side synchronous rectifier
C2869105 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SP015N03BGHTD | Siliup | TO-263-3L | 162 | $ 1.8099 | ||
| CSD19532KTTT | TI | TO-263-3 | 22 | $ 5.7585 | ||
| JMSH1004AE | Jiangsu JieJie Microelectronics | TO-263-3 | 209 | $ 0.9569 | ||
| MX10T03AHT | Wuxi Maxinmicro | TO-263-3L | 18,772 | $ 0.4112 | ||
| CSD19535KTTT | TI | D2PAK(TO-263-3) | 0 | $ 3.6246 | ||
| NCEP01T18D | NCE | TO-263-3 | 0 | $ 3.4821 | ||
| CSD19536KTTT | TI | TO-263-3 | 0 | $ 7.6002 | ||
| CSD19536KTT | TI | TO-263-3 | 0 | $ 3.7718 | ||
| AUIRFS4010TRL | Infineon | TO-263-3 | 0 | $ 3.9004 |